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 Preliminary Data Sheet 2.1
FMS2014QFN
High Power GaAs SPDT Switch
Features:
3x3x0.9mm Packaged pHEMT Switch Excellent low control voltage performance Excellent harmonic performance under GSM/DCS/PCS/EDGE power levels Very high Tx-Rx isolation: >28dB typ. at 1.8GHz Very low Insertion loss: 0.5dB at 1.8GHz Very low control current
Functional Schematic
ANT
V1
V2
RF1
RF2
Description and Applications:
The FMS2014QFN is a low loss, high power and linear single pole double throw Gallium Arsenide antenna switch designed for use in mobile handset applications. The die is fabricated using the Filtronic FL05 0.5m switch process technology, which offers excellent performance optimised for switch applications. The FMS2014QFN is designed for use in dual/tri and quad band GSM handset antenna switch modules and RF front-end modules. It can also find use in other applications where high power and linear RF switching is necessary.
Electrical Specifications:
Parameter
Insertion Loss
(TAMBIENT = 25C,Vctrl = 0V/2.5V, ZIN = ZOUT = 50)
Test Conditions
0.5 - 1.0 GHz 1.0 - 2.0 GHz
Min
Typ
0.45 0.5 20 -32 -30 -75 -75 -75 -75 <0.3
Max
Units
dB dB dB dB dB dBc dBc dBc dBc s
Return Loss Isolation
0.5 - 2.5 GHz 0.5 - 1.0 GHz 1.0 - 2.0 GHz
2nd Harmonic Level
1 GHz, Pin = +35 dBm, 100% Duty Cycle 2 GHz, Pin = +35 dBm, 100% Duty Cycle
3rd Harmonic Level
1 GHz, Pin = +35 dBm, 100% Duty Cycle 2 GHz, Pin = +35 dBm, 100% Duty Cycle
Switching speed : Trise, Tfall Ton, Toff Control Current
10% to 90% RF and 90% to 10% RF 50% control to 90% RF and 50% control to 10% RF +35dBm RF input @1GHz
1.0 <10
s A
Note:
External DC blocking capacitors are required on all RF ports (typ: 100pF)
1
Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: sales@filcsi.com Website: www.filtronic.com
Preliminary Data Sheet 2.1
FMS2014QFN
Absolute Maximum Ratings:
Parameter
Max Input Power Control Voltage Operating Temp Storage Temp
Symbol
Pin V ctrl T oper T stor
Absolute Maximum
+38dBm +5V -40C to +100C -55C to +150C
Note: Exceeding any one of these absolute maximum ratings may cause permanent damage to the device.
Truth Table:
Switch State
(A) (B)
VC1
HIGH LOW
VC2
LOW HIGH
ANT- RF1
Insertion Loss Isolation
ANT- RF2
Isolation Insertion Loss
General Test Conditions:
Bias Voltages Port Impedances Off arm termination
LOW = 0V to 0.2V HIGH +2.5V to +5V 50 50
2
Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: sales@filcsi.com Website: www.filtronic.com
Preliminary Data Sheet 2.1
FMS2014QFN
Typical Measured Performance on Evaluation Board (De-Embedded):
(Measurement Conditions VCTRL = 2.5V (high) & 0V (low), TAMBIENT = 25C unless otherwise stated)
FMS2014QFN INSERTION LOSS
0 -0.1 -0.2 -0.3 -0.4 dB -0.5 -0.6 -0.7 -0.8 -0.9 -1 0.5 1
1.5 2 Frequency (GHz)
2.5
3
-20 -22.5 -25 dB -27.5 -30 -32.5 -35 0.5 1
FMS 2014QFN ISOLATION
1.5 2 Frequency (GHz)
2.5
3
0 -5 -10 -15 dB -20 -25 -30 -35 -40 0.5 1
FMS2014QFN RETURN LOSS
1.5 2 Frequency (GHz)
2.5
3
3
Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: sales@filcsi.com Website: www.filtronic.com
Preliminary Data Sheet 2.1
FMS2014QFN
Pad Layout:
V1
ANT
V2
Pin Number
1
Description
N/C N/C RF1 N/C N/C N/C RF2 N/C N/C V2 ANT RF V1
Pin 1
12
11
10 9
2 3 4
2 RF1 3 4 5 6
8 7 RF2
5 6 7 8 9 10 11
*View from the top of the package
12
QFN 12 Lead 3*3 Package Outline:
4
Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: sales@filcsi.com Website: www.filtronic.com
Preliminary Data Sheet 2.1
FMS2014QFN
Evaluation Board:
BOM Label
C5 C6
C3,C4 C1,C2
Component
Capacitor, 470pF, 0603 Capacitor, 100pF, 0402 Capacitor, 47pF, 0402
C1
C2
C5,C6
C3
C4
BOARD
Preferred evaluation board material is 0.25 mm thick ROGERS RT4350. All RF tracks should be 50 ohm characteristic impedance.
Evaluation Board De-Embedding Data (Measured):
0 -0.1 -0.2 -0.3 -0.4 dB -0.5 -0.6 -0.7 -0.8 -0.9 -1 0.5
FMS2014QFN CAL BOARD INSERTION LOSS
1
1.5 2 Frequency (GHz)
2.5
3
5
Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: sales@filcsi.com Website: www.filtronic.com
Preliminary Data Sheet 2.1
FMS2014QFN
Ordering Information:
Part Number
FMS2014-001 FMS2014-001-EB
Description
Packaged Die Packaged die mounted on evaluation board
Handling Precautions:
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 1A (0-500V). Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263.
Preferred Assembly Instructions:
Please refer to FCSL applications note: FAN 003 (handling and assembly of Filtronic QFN devices)
Disclaimers:
This product is not designed for use in any space based or life sustaining/supporting equipment.
6
Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: sales@filcsi.com Website: www.filtronic.com


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